- silicon epitaxy
- 硅外延
English-Chinese electricity dictionary (电气专业词典). 2013.
silicon epitaxy
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silicon epitaxy — silicio epitaksija statusas T sritis radioelektronika atitikmenys: angl. silicon epitaxy vok. Siliziumepitaxie, f rus. эпитаксия кремния, f pranc. épitaxie de silicium, f … Radioelektronikos terminų žodynas
epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… … Universalium
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
silicon molecular-beam epitaxy — molekulinė silicio epitaksija statusas T sritis radioelektronika atitikmenys: angl. silicon molecular beam epitaxy vok. Silizium Molekularstrahlepitaxie, f rus. молекулярно пучковая эпитаксия кремния, f pranc. épitaxie de silicium par jet… … Radioelektronikos terminų žodynas
Strained silicon — is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiliconGermanium). As the atoms in the… … Wikipedia
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Heterostruktur — Heterostruktur, Physik: Materialkombination aus verschiedenen chemisch verwandten Materialien mit gleicher oder ähnlicher Gitterstruktur. Heterostrukturen wurden zuerst aus Halbleitern der 3. und 5. Gruppe des Periodensystems in Form dünner… … Universal-Lexikon
Siliziumepitaxie — silicio epitaksija statusas T sritis radioelektronika atitikmenys: angl. silicon epitaxy vok. Siliziumepitaxie, f rus. эпитаксия кремния, f pranc. épitaxie de silicium, f … Radioelektronikos terminų žodynas
